Normalized Aspect Ratio (W/L)

نویسنده

  • Ehsan Zhian Tabasy
چکیده

1 PROBLEM 1 Based on [1], design equations for a saturated MOSFET using ACM model are given by: f D m T i I ng    1 1 2  (1) S D f I I i  (2) L W nC I T ox S. 2 2    (3)   1 1 2. 2 2    f T T i L f   (4)   4 1 1) (    f T SAT DS i V  (5) 1 1 1.    f T ox m i C g L W   (6) According to these equations, (W/L), f T , and power consumption can be plotted as a function of inversion level (i f). The normalized plots generated using MATLAB are shown in Fig. 1. f max is another important parameter of a technology. It can be presented as a function of f T as shown below:

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تاریخ انتشار 2010